Rapid Thermal Processing (RTP) systems offer precise, high-speed thermal treatment of silicon and compound semiconductor wafers, supporting a variety of advanced manufacturing processes in the semiconductor industry.
These systems are designed for accurate temperature control, rapid heating and cooling, and process repeatability. They enable manufacturers to optimize material properties while minimizing thermal exposure.
By combining advanced thermal control with process flexibility, RTP systems help semiconductor manufacturers to improve material quality, enhance device performance and achieve consistent production results.
RTP Series
High Speed Heat Treatment System
The RTP oven is a durable and efficient heat treatment system that features a unique lamp arrangement with upper and lower cross lamp arrays. The process cycles are extremely short due to the rapid attainment of a vacuum of 10exp.-3 hPa. An optional HV configuration is available for achieving a vacuum of up to 10exp.-6.
Model RTP series
Front Loading
RTP 100: 4'' Diameter / Max 1200℃
RTP 100-HV: Vacuum up to 10E-6 hPa
RTP 150: 6'' Diameter / Max 1000℃
RTP 150-HV: Vacuum up to 10E-6 hPa
RTP 150-EP: Ramp up 150 K/sec
Heating & Cooling
RTP 100:
Max temperature is 1200℃
Ramp up 150 K/sec - Ramp-down 200 K/min
RTP 150:
Max temperature is 1000℃
Ramp up 75 K/sec - Ramp-down 200 K/min
Chamber cooling by external water system
Wafer cooling by Nitrogen Gas
Applications
Implantation / Contact Annealing
RTP - RTA- RTO- RTN
SiAu, SiAl, SiMo Alloying
Low k dielectric
Crystallization & Densification
Si-Solar Wafer cells on glass
Features
Excellent temperature uniformity
UP to 4 gas lines (MFC)
Heated by 2 x 24 IR Infrared Lamps (21 kW)
Integrated data logging
Quartz glass universal holder
Flow controller for 5nlmVacuum up to .001 hPa
SPS 50 programs with 50 steps each
VPO-300
High temperature Vacuum Process Oven
12'' Wafer Diameter & 12'' x12'' Substrates
The temperature distribution tool provides outstanding and unparalleled temperature uniformity resulting in process repeatability. The process cycles are extremely short due to fast reaching of vacuum up to 10exp.-3 hPa (Optional up to 10exp.-6 hPa)
Model VPO-1000-300
Automatic Vertical Open / Close
Max 1000℃ / Optional 1200℃
New VPO-1000-300-HV
Vacuum up to 10E-6 hPa
Heating & Cooling
Max temperature 1000℃
Fast ramp up 40 K/sec
Fast ramp-down 200 K/min
Chamber cooling by external water system
Wafer cooling by Nitrogen Gas
Features
Excellent temperature uniformity
UP to 4 gas lines (MFC)
Heated by 48 IR Infrared Lamps (42 kW)Top & Bottom (selection by SW)
PID controller
Integrated data logging
Quartz glass universal holderVertical
Automatic open / close chamber
Flow controller for 5nlmVacuum up to .001 hPa
Applications
Implantation / Contact Annealing
RTP - RTA- RTO- RTN
SiAu, SiAl, SiMo Alloying
Operation with inert gases, Oxygen, Hydrogen, Forming gas.
Low k dielectrica
Crystallization & Densification
Si-Solar Wafer cells on glass
